型号/品牌/封装
品类/描述
库存
价格(含税)
资料
-
品类: 晶体管描述: BC856BW PNP三极管 -80V -100mA/-0.1A 100MHz 125~475 -250mV/-0.25V SOT-323/SC-70 marking/标记 3B 开关/放大365720+¥0.108050+¥0.1000100+¥0.0960300+¥0.0928500+¥0.09041000+¥0.08885000+¥0.087210000+¥0.0856
-
品类: 晶体管描述: BC846B NPN三极管 80V 100mA/0.1A 100MHz 200~450 200~600 mV SOT-23/SC-59 marking/标记 1B 通用开关和放大742520+¥0.094550+¥0.0875100+¥0.0840300+¥0.0812500+¥0.07911000+¥0.07775000+¥0.076310000+¥0.0749
-
品类: 晶体管描述: P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-343661+¥794.181010+¥766.315050+¥762.8318100+¥759.3485150+¥753.7753250+¥748.8988500+¥744.02221000+¥738.4490
-
品类: 晶体管描述: Trans RF MOSFET N-CH 65V 5Pin Case H-37248 Tray12731+¥445.406510+¥433.787250+¥424.8791100+¥421.7806200+¥419.4567500+¥416.35831000+¥414.42172000+¥412.4852
-
品类: 晶体管描述: 射频金属氧化物半导体场效应(RF MOSFET)晶体管76331+¥657.084610+¥634.029050+¥631.1471100+¥628.2651150+¥623.6540250+¥619.6193500+¥615.58451000+¥610.9734
-
品类: 晶体管描述: THERMALLY-ENHANCED HIGH POWER RF LDMOS FET 240W, 28V, 1805 #19; 1880MHz49051+¥998.959210+¥963.908050+¥959.5266100+¥955.1452150+¥948.1350250+¥942.0010500+¥935.86701000+¥928.8568
-
品类: 晶体管描述: Trans RF MOSFET N-CH 65V 5Pin Case H-37248 T/R44641+¥738.560410+¥712.646050+¥709.4067100+¥706.1674150+¥700.9845250+¥696.4495500+¥691.91451000+¥686.7316
-
品类: 晶体管描述: 射频金属氧化物半导体场效应(RF MOSFET)晶体管 RFP-LDH1V99561+¥564.029010+¥549.315250+¥538.0346100+¥534.1109200+¥531.1682500+¥527.24451000+¥524.79222000+¥522.3399
-
品类: 晶体管描述: High Power RF LDMOS FET, 350W, 50V, 1200 – 1400MHz72911+¥3136.221010+¥3107.709925+¥3093.454450+¥3079.1988100+¥3064.9433150+¥3050.6877250+¥3036.4322500+¥3022.1766
-
品类: 晶体管描述: 射频金属氧化物半导体场效应(RF MOSFET)晶体管 RFP-LDH1V16291+¥2312.156010+¥2291.136425+¥2280.626650+¥2270.1168100+¥2259.6070150+¥2249.0972250+¥2238.5874500+¥2228.0776
-
品类: 晶体管描述: 射频金属氧化物半导体场效应(RF MOSFET)晶体管 RFP-LDH1V46871+¥416.196510+¥405.339250+¥397.0153100+¥394.1200200+¥391.9485500+¥389.05331000+¥387.24372000+¥385.4342
-
品类: 晶体管描述: P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-334431+¥2289.012010+¥2268.202825+¥2257.798250+¥2247.3936100+¥2236.9890150+¥2226.5844250+¥2216.1798500+¥2205.7752
-
品类: 晶体管描述: High Power RF LDMOS FET, 12W, 50V, 390 – 450MHz71981+¥363.952010+¥354.457650+¥347.1786100+¥344.6467200+¥342.7478500+¥340.21601000+¥338.63362000+¥337.0512
-
品类: 晶体管描述: High Power RF LDMOS FET, 300W, 50V, 703 – 960MHz97951+¥711.439810+¥686.477050+¥683.3567100+¥680.2363150+¥675.2437250+¥670.8753500+¥666.50681000+¥661.5142
-
品类: 晶体管描述: High Power RF LDMOS FET, 350W, 50V, 1200 – 1400MHz46891+¥2933.568010+¥2906.899225+¥2893.564850+¥2880.2304100+¥2866.8960150+¥2853.5616250+¥2840.2272500+¥2826.8928
-
品类: 晶体管描述: High Power RF LDMOS FET, 330W, 50V, 746 – 768MHz79121+¥823.057210+¥794.178050+¥790.5681100+¥786.9582150+¥781.1824250+¥776.1285500+¥771.07461000+¥765.2988
-
品类: 晶体管描述: High Power RF LDMOS FET, 330W, 50V, 746 – 768MHz63381+¥748.239010+¥721.985050+¥718.7033100+¥715.4215150+¥710.1707250+¥705.5763500+¥700.98181000+¥695.7310
-
品类: 晶体管描述: Trans RF MOSFET N-CH 65V96631+¥1106.325010+¥1096.267525+¥1091.238850+¥1086.2100100+¥1081.1813150+¥1076.1525250+¥1071.1238500+¥1066.0950
-
品类: 晶体管描述: Trans MOSFET N-CH 65V 7Pin H-37275G-6/2 T/R56631+¥1162.909010+¥1152.337125+¥1147.051250+¥1141.7652100+¥1136.4793150+¥1131.1933250+¥1125.9074500+¥1120.6214
-
品类: 晶体管描述: 射频金属氧化物半导体场效应(RF MOSFET)晶体管75031+¥782.678410+¥755.216050+¥751.7832100+¥748.3504150+¥742.8579250+¥738.0520500+¥733.24611000+¥727.7536
-
品类: 晶体管描述: RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, H-34288-4/2, 4 PIN3178
-
品类: 晶体管描述: Trans RF MOSFET N-CH 65V 9Pin Case 36275 Tray81581+¥1206.370010+¥1195.403025+¥1189.919550+¥1184.4360100+¥1178.9525150+¥1173.4690250+¥1167.9855500+¥1162.5020
-
品类: 晶体管描述: 射频金属氧化物半导体场效应(RF MOSFET)晶体管48951+¥1207.668010+¥1196.689225+¥1191.199850+¥1185.7104100+¥1180.2210150+¥1174.7316250+¥1169.2422500+¥1163.7528